Wang Z.M. (Ed.) Self-Assembled Quantum Dots

Springer Science+Business Media, LLC, 2008. – 469 p. – ISBN: 0387741909Self-Assembled Quantum Dots, commonly referred to as self-organized quantum dots, form spontaneously under certain growth conditions during molecularbeam epitaxy or metal organic chemical vapor deposition, as a consequence of lattice-mismatch between the deposited material (generally semiconductors) and underlying substrate. The resulting semiconductor nanostructures consist of three-dimensional islands standing on a two-dimensional wetting layer. Such islands can
be subsequently buried to realize quantum confinement. In the past 15 years, self-assembled quantum dots have provided vast opportunities for physical research and technological applications, including quantum cryptography, quantum computing, optics and optoelectronics. The present book is devoted to some of these fascinating aspects, including growth, properties and applications of quantum dots, both in theory and experiment.
The main body of the chapter comprises of contributionsthat focuses on InGaAs quantum dots, since this material has been intensively investigated as a model system. Specifically, chapters 1–3 offer a comprehensive perspective from a growth point of view. Chapter 1 reviews the recent advances on understanding the basic microscopic mechanisms driving the nucleation and evolution of quantum dots under the role of composition, coverage, and intermixing. On the other hand, the
authors of Chapter 2 and Chapter 3 summarize their recent efforts to address two challenging issues of the quantum dot growth; these include random distribution on surface and non-uniformityin size and shape. Chapter 2 demonstrates the capability to control the position of InGaAs quantum dots arrays at the nanometer scale on (110) crystalsurface.Chapter3 reportsthe achievementofa particularkindofquantum dot ensemble, equally-shapedwith a well-defined multimodal size distribution.The InAs/GaAs(001) Quantum Dots Transition: Advances on Understanding
Self-assembly of InAs Quantum Dot Structures on Cleaved Facets
InAs/GaAs Quantum Dots with Multimodal Size Distribution
Carrier Transfer in the Arrays of Coupled Quantum Dots
Dynamics of Carrier Transfer into In(Ga)As Self-assembled Quantum Dots
Spin Phenomena in Self-assembled Quantum Dots
Excitons and Spins in Quantum Dots Coupled to a Continuum of States
Quantum Coupling in Quantum Dot Molecules
Studies of Semiconductor Quantum Dots for Quantum Information Processing
Stress Relaxation Phenomena in Buried Quantum Dots
Capacitance-VoltageSpectroscopy of InAs Quantum Dots
In(Ga)As/GaAs Quantum Dots Grown by MOCVD for Opto-electronic Device Applications
Area-selective and Site-controlled InAs Quantum-dot Growth Techniques for Photonic Crystal-based Ultra-small Integrated Circuit
Detailed Analysis of the Shape-dependent Deformation Field in 3D Ge Islands on Si(001)
Growth and Characterization of III-Nitride Quantum Dots and their Application to Emitters