Park Ridge, NJ: Noyes Publications, 1990. — xxiii, 523 p. — ISBN 0-8156-1220-1.
Рассматриваются физические основы ряда газовых разрядов, используемых в плазменных технологиях для травления и осаждения различных покрытий.
Книга имеет следующие разделы.
Techniques for IC processing.
Introduction to plasma concepts and discharge configurations.
Fundamentals of sputtering and reflection.
Bombardment-induced compositional change with alloys, oxides, oxysalts, and halides.
RF diode sputter etching and deposition.
Magnetron plasma deposition processes.
Broad-beam ion sources.
Reactive ion etching.
Reactive sputter deposition.
Plasma enhanced chemical vapor deposition of thin films for microelectronics.
Electron cyclotron resonance microwave discharges for etching and thin film deposition.
Hollow cathode etching and deposition.
Ion plating.
Ionized cluster beam (ICB) Deposition techniques.
The activated reactive evaporation (ARE) Process.
Formation of thin films by remote plasma enhanced chemical vapor deposition (remote PECVD).
Selective bias sputter deposition.
Vacuum arc-based processing.
Ion-surface interactions: general understandings.
Ion assisted deposition.
Microstructural control of plasma-sputtered refractory coatings.